Integrated circuit and chip
Ultra-high purity electronic gases for integrated circuits, mainly TEOS, tantalum source, hafnium source, etc., are used as IC precursors for semiconductor manufacturing processes. In the semiconductor manufacturing process including film, photolithography, interconnection, doping technology, etc., precursors are mainly used in vapor deposition (including physical deposition PVD, chemical vapor deposition CVD and atomic vapor deposition ALD) to form various thin film layers that meet the requirements of semiconductor manufacturing. In addition, precursors can also be used for epitaxial growth, etching, ion implantation doping and cleaning of semiconductors, and are one of the core materials for semiconductor manufacturing. Semiconductor precursors can be divided into: TEOS (tetraethyl orthosilicate), boron phosphate (B, P) dopants, metal precursors, high-k precursors, low-k precursors, etc. TEOS and boron-phosphorous dopants are mainly used to produce ILD (Inter Layer Dielectric) and IMD (Inter Metal Dielectric), among which TEOS is mainly used as a crosslinking agent of silicone polymers and precursor of silica film. The high-k precursor is used to generate capacitance and grid.